PART |
Description |
Maker |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
VG2618165CJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor http://
|
MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM 2M X 8 EDO DRAM, 60 ns, PDSO28 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp. INTEGRATED SILICON SOLUTION INC
|